Migration-enhanced metal-organic chemical vapor deposition of Al_xIn_1-xN/GaN heterostructures (x>0.75) on c-plane sapphireBILLINGSLEY, Daniel; JINWEI YANG; GASKA, Remis et al.Journal of crystal growth. 2011, Vol 327, Num 1, pp 98-101, issn 0022-0248, 4 p.Article

A novel asymmetric indolo[3,2-b]carbazole derivative containing benzothiazole and dimesitylboron units: Synthesis, photophysical and sensing propertiesHEPING SHI; JINWEI YANG; XIUQING DONG et al.Synthetic metals. 2013, Vol 179, pp 42-48, issn 0379-6779, 7 p.Article

Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate DesignAJAY KUMAR SATTU; JINWEI YANG; GASKA, Remis et al.IEEE microwave and wireless components letters. 2011, Vol 21, Num 6, pp 305-307, issn 1531-1309, 3 p.Article

Non-catalyst growth and characterization of a-plane AlGaN nanorodsGAEVSKI, Mikhail E; WENHONG SUN; JINWEI YANG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1696-1699, issn 1862-6300, 4 p.Conference Paper

255 nm interconnected micro-pixel deep ultraviolet light emitting diodesASIF KHAN, M; SHUAI WU; WENHONG SUN et al.International Electron Devices Meeting. 2004, pp 347-350, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Deep ultraviolet semiconductor light sources for sensing and securitySHATALOV, Max; BILENKO, Yuri; JINWEI YANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7484, issn 0277-786X, isbn 978-0-8194-7790-3 0-8194-7790-7, 1Vol, 74840C.1-74840C.11Conference Paper

Deep ultraviolet light emitting diodes using AlGaN quantum well active regionASIF KHAN, M; SHATALOV, Maxim; ADIVARAHAN, Vinod et al.Proceedings - Electrochemical Society. 2003, pp 152-157, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper